DMT10H015LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 31.38 грн |
| 5000+ | 28.07 грн |
| 7500+ | 27.82 грн |
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Технічний опис DMT10H015LSS-13 Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMT10H015LSS-13 за ціною від 31.59 грн до 115.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DMT10H015LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 8.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 58894 шт: термін постачання 21-31 дні (днів) |
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DMT10H015LSS-13 | Diodes Incorporated |
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
на замовлення 2305 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMT10H015LSS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 58894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.46 грн |
| 10+ | 70.07 грн |
| 100+ | 45.88 грн |
| 500+ | 34.62 грн |
| 1000+ | 31.59 грн |
| DMT10H015LSS-13 |
|
Виробник: Diodes Incorporated
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
MOSFETs 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
на замовлення 2305 шт:
термін постачання 21-30 дні (днів)