DMT10H017LPD-13 Diodes Incorporated

Description: MOSFET 2N-CH 100V 54.7A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 78W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.