DMT10H025SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 21.57 грн |
| 5000+ | 19.17 грн |
| 7500+ | 18.35 грн |
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Технічний опис DMT10H025SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 41.2A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції DMT10H025SK3-13 за ціною від 21.93 грн до 83.69 грн
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DMT10H025SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 41.2A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 7558 шт: термін постачання 21-31 дні (днів) |
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DMT10H025SK3-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K |
на замовлення 4725 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMT10H025SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 41.2A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.69 грн |
| 10+ | 50.52 грн |
| 100+ | 33.20 грн |
| 500+ | 24.18 грн |
| 1000+ | 21.93 грн |
| DMT10H025SK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
на замовлення 4725 шт:
термін постачання 21-30 дні (днів)