DMT10H032LDV-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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Технічний опис DMT10H032LDV-7 Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V, Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Інші пропозиції DMT10H032LDV-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT10H032LDV-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K |
товару немає в наявності |