DMT10H032SFVW-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI33, Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.3W (Ta).