DMT10H072LFV-13 Diodes Incorporated

Description: MOSFET N-CH 100V PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PowerDI3333-8 (Type UX), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).