Технічний опис DMT12H065LFDF-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W, On-state resistance: 0.35Ω, Type of transistor: N-MOSFET, Power dissipation: 1.2W, Polarisation: unipolar, Kind of package: reel; tape, Mounting: SMD, Gate charge: 5.5nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Case: U-DFN2020-6, Pulsed drain current: 25A, Drain-source voltage: 115V, Drain current: 3.4A, кількість в упаковці: 10000 шт.
Інші пропозиції DMT12H065LFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT12H065LFDF-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: U-DFN2020-6 Pulsed drain current: 25A Drain-source voltage: 115V Drain current: 3.4A кількість в упаковці: 10000 шт |
товар відсутній |
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| DMT12H065LFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET 61V~100V U-DFN2020-6 |
товар відсутній |
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| DMT12H065LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 115V; 3.4A; Idm: 25A; 1.2W On-state resistance: 0.35Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: U-DFN2020-6 Pulsed drain current: 25A Drain-source voltage: 115V Drain current: 3.4A |
товар відсутній |