DMT12H090LFDF4-13 Diodes Incorporated

Description: MOSFET N-CH 115V 3.4A 6DFN, Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 115 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Supplier Device Package: X2-DFN2020-6, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerXDFN, Packaging: Tape & Reel (TR).