DMT15H017LPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 101V~250V POWERDI5, Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).