DMT15H035SCT Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 3+ | 128.81 грн |
| 10+ | 78.61 грн |
| 100+ | 57.67 грн |
| 500+ | 43.39 грн |
| 1000+ | 38.26 грн |
| 2500+ | 35.23 грн |
| 5000+ | 31.93 грн |
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Технічний опис DMT15H035SCT Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V.
Інші пропозиції DMT15H035SCT за ціною від 77.53 грн до 77.53 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||
|---|---|---|---|---|---|---|---|
| DMT15H035SCT | Diodes Incorporated |
 Description: MOSFET BVDSS: 101V~250V TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V |
на замовлення 5450 шт: термін постачання 21-31 дні (днів) |
|
| DMT15H035SCT |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 101V~250V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Description: MOSFET BVDSS: 101V~250V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
на замовлення 5450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 77.53 грн |