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DMT15H053SSS-13

DMT15H053SSS-13 Diodes Incorporated

DIOD_S_A0009150471_1-2543278.pdf
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 101V~250V SO-8 T&R 2.5K
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Технічний опис DMT15H053SSS-13 Diodes Incorporated

Description: MOSFET N-CH 150V 5.2A/15A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Інші пропозиції DMT15H053SSS-13

Фото Назва Виробник Інформація Доступність
Ціна
DMT15H053SSS-13 DMT15H053SSS-13 Diodes Incorporated DMT15H053SSS.pdf Description: MOSFET N-CH 150V 5.2A/15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
DMT15H053SSS-13 DMT15H053SSS-13 Diodes Incorporated DMT15H053SSS.pdf Description: MOSFET N-CH 150V 5.2A/15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
DMT15H053SSS-13 DMT15H053SSS.pdf
DMT15H053SSS-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 150V 5.2A/15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
DMT15H053SSS-13 DMT15H053SSS.pdf
DMT15H053SSS-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 150V 5.2A/15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.