DMT2004UFDF-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 24V 14.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V
Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.53 грн |
Відгуки про товар
Написати відгук
Технічний опис DMT2004UFDF-7 Diodes Incorporated
Description: MOSFET N-CH 24V 14.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V, Power Dissipation (Max): 800mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMT2004UFDF-7 за ціною від 11.89 грн до 46.89 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMT2004UFDF-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 24V 14.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 9A, 10V Power Dissipation (Max): 800mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5736 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMT2004UFDF-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
на замовлення 4980 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| DMT2004UFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
| DMT2004UFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 11.2A; Idm: 70A; 1.8W Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 24V Drain current: 11.2A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Mounting: SMD |
товар відсутній |