DMT2004UFV-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 53.7nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 24V
Drain current: 55A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис DMT2004UFV-13 DIODES INCORPORATED
Description: MOSFET N-CH 24V 70A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.45V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 24 V, Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V.
Інші пропозиції DMT2004UFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMT2004UFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 24V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
товару немає в наявності |
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DMT2004UFV-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
товару немає в наявності |
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| DMT2004UFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 55A; Idm: 90A; 2.3W Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 53.7nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 24V Drain current: 55A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
товару немає в наявності |