DMT26M0LDG-7 Diodes Incorporated

Description: MOSFET 2N-CH 25V 11.6A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.24W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V, Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA, Supplier Device Package: PowerDI3333-8 (Type F).