DMT3003LFGQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1714000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 24.56 грн |
| 4000+ | 22.33 грн |
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Технічний опис DMT3003LFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMT3003LFGQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT3003LFGQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 2000 шт |
товару немає в наявності |
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DMT3003LFGQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS 25V-30V |
товару немає в наявності |
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| DMT3003LFGQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W Drain-source voltage: 30V Drain current: 18A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 44nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerDI3333-8 |
товару немає в наявності |