DMT3004LPS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 28.03 грн |
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Технічний опис DMT3004LPS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.7W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V.
Інші пропозиції DMT3004LPS-13 за ціною від 28.32 грн до 104.79 грн
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DMT3004LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 21A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT3004LPS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 21A 8-Pin PowerDI 5060 T/R |
товару немає в наявності |
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| DMT3004LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Drain-source voltage: 30V Drain current: 17A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 43.7nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 180A Mounting: SMD Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товару немає в наявності |
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DMT3004LPS-13 | Виробник : Diodes Incorporated |
MOSFET 30V N-Ch Enh FET |
товару немає в наявності |
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| DMT3004LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W Drain-source voltage: 30V Drain current: 17A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 43.7nC Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 180A Mounting: SMD Case: PowerDI5060-8 |
товару немає в наявності |