DMT3006LFDFQ-7 Diodes Incorporated
на замовлення 2960 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.03 грн |
| 11+ | 32.23 грн |
| 100+ | 20.97 грн |
| 500+ | 16.48 грн |
| 1000+ | 12.73 грн |
| 3000+ | 10.23 грн |
| 6000+ | 9.86 грн |
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Технічний опис DMT3006LFDFQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMT3006LFDFQ-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT3006LFDFQ-7 | Виробник : Diodes Inc |
 MOSFET BVDSS: 25V30V U-DFN2020-6 T&R 3K |
товару немає в наявності |
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| DMT3006LFDFQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 1 шт |
товару немає в наявності |
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DMT3006LFDFQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
|
| DMT3006LFDFQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W Drain-source voltage: 30V Drain current: 12.5A On-state resistance: 15mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |