DMT3006LFG-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 20.86 грн |
| 6000+ | 18.58 грн |
| 9000+ | 17.82 грн |
| 15000+ | 16.58 грн |
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Технічний опис DMT3006LFG-13 Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMT3006LFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMT3006LFG-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R |
товару немає в наявності |
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| DMT3006LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
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DMT3006LFG-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
товару немає в наявності |
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| DMT3006LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W Drain-source voltage: 30V Drain current: 12.8A On-state resistance: 10mΩ Type of transistor: N-MOSFET Power dissipation: 27.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerDI3333-8 |
товару немає в наявності |