Технічний опис DMT3006LFVQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W, Drain-source voltage: 30V, Drain current: 45A, On-state resistance: 11mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 2W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 16.7nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 90A, Mounting: SMD, Case: PowerDI3333-8, кількість в упаковці: 3000 шт.
Інші пропозиції DMT3006LFVQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT3006LFVQ-13 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товару немає в наявності |
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DMT3006LFVQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 |
товару немає в наявності |
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DMT3006LFVQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
товару немає в наявності |
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| DMT3006LFVQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 45A On-state resistance: 11mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 16.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8 |
товару немає в наявності |