DMT3009LFVW-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 40.24 грн |
10+ | 33.9 грн |
100+ | 23.46 грн |
500+ | 18.4 грн |
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Технічний опис DMT3009LFVW-7 Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V.
Інші пропозиції DMT3009LFVW-7 за ціною від 14.08 грн до 43.24 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMT3009LFVW-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V |
на замовлення 2321 шт: термін постачання 21-30 дні (днів) |
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DMT3009LFVW-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
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DMT3009LFVW-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V |
товар відсутній |
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DMT3009LFVW-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 90A Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |