DMT3009LFVWQ-13 Diodes Incorporated

Description: MOSFET N-CH 30V 12A PWRDI3333, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).