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DMT3009LFVWQ-13 DIODES INCORPORATED

Name: DMT3009LFVWQ-13
Brand: Diodes Incorporated
SKU: 3772775-4
Price: 65130 UAH
Availability: BackOrder

Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Case: PowerDI3333-8
кількість в упаковці: 3000 шт

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Технічний опис DMT3009LFVWQ-13 DIODES INCORPORATED

Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції DMT3009LFVWQ-13

Назва	Виробник	Інформація	Доступність	Ціна
DMT3009LFVWQ-13	Виробник : Diodes Incorporated	Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
DMT3009LFVWQ-13	Виробник : Diodes Incorporated	MOSFETs MOSFET BVDSS: 25V-30V	товару немає в наявності	В кошику од. на суму грн.
DMT3009LFVWQ-13	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI3333-8	товару немає в наявності	В кошику од. на суму грн.