на замовлення 1590 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 65.15 грн |
| 10+ | 46.17 грн |
| 100+ | 27.47 грн |
| 500+ | 22.56 грн |
| 1000+ | 20.37 грн |
| 2000+ | 17.58 грн |
| 4000+ | 16.90 грн |
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Технічний опис DMT3009LFVWQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT3009LFVWQ-7 за ціною від 19.78 грн до 75.91 грн
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DMT3009LFVWQ-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 30V 12A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1270 шт: термін постачання 21-31 дні (днів) |
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| DMT3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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DMT3009LFVWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMT3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Case: PowerDI®3333-8 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 12nC On-state resistance: 20mΩ Power dissipation: 2.3W Drain current: 10A Drain-source voltage: 30V Pulsed drain current: 90A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |