DMT3009LFVWQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.01 грн |
| 10+ | 44.75 грн |
| 100+ | 29.32 грн |
| 500+ | 21.29 грн |
| 1000+ | 19.28 грн |
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Технічний опис DMT3009LFVWQ-7 Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT3009LFVWQ-7 за ціною від 17.07 грн до 84.80 грн
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DMT3009LFVWQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 1590 шт: термін постачання 21-30 дні (днів) |
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| DMT3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI®3333-8 кількість в упаковці: 1 шт |
товару немає в наявності |
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DMT3009LFVWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMT3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 90A; 2.3W Drain-source voltage: 30V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Case: PowerDI®3333-8 |
товару немає в наявності |