DMT3020LDV-13 Diodes Incorporated

Description: MOSFET 2N-CH 30V 32A PWRDI3333, Supplier Device Package: PowerDI3333-8 (Type UXC), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 900mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).