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DMT3020LFDFQ-13 Diodes Zetex

Виробник: Diodes Zetex
Trans MOSFET N-CH 30V 8.4A 6-Pin UDFN EP T/R Automotive AEC-Q101

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Технічний опис DMT3020LFDFQ-13 Diodes Zetex

Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V, Qualification: AEC-Q101.

Інші пропозиції DMT3020LFDFQ-13

Назва	Виробник	Інформація	Доступність	Ціна
DMT3020LFDFQ-13	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
DMT3020LFDFQ-13	Виробник : Diodes Incorporated	Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
DMT3020LFDFQ-13	Виробник : Diodes Incorporated	MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K	товару немає в наявності	В кошику од. на суму грн.
DMT3020LFDFQ-13	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; Idm: 40A; 0.4W Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: U-DFN2020-6	товару немає в наявності	В кошику од. на суму грн.