Технічний опис DMT3020UFDB-13 Diodes Inc
Description: MOSFET 2N-CH 30V 6.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 860mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, Vgs(th) (Max) @ Id: 1.7V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Інші пропозиції DMT3020UFDB-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT3020UFDB-13 | Виробник : DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 кількість в упаковці: 10000 шт |
товару немає в наявності |
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DMT3020UFDB-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 860mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
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| DMT3020UFDB-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K |
товару немає в наявності |
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| DMT3020UFDB-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; Idm: 35A; 1.3W Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 8.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |