DMT3022UEV-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 17A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXD)
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Технічний опис DMT3022UEV-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 17A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXD).
Інші пропозиції DMT3022UEV-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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DMT3022UEV-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K |
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