DMT30M9LPS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 2+ | 251.00 грн |
| 10+ | 157.94 грн |
| 100+ | 110.17 грн |
| 500+ | 84.24 грн |
| 1000+ | 84.01 грн |
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Технічний опис DMT30M9LPS-13 Diodes Incorporated
Description: MOSFET BVDSS: 25V-30V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V.
Інші пропозиції DMT30M9LPS-13
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DMT30M9LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V-30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V |
товару немає в наявності |
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DMT30M9LPS-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS 25V-30V |
товару немає в наявності |
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| DMT30M9LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 2.6W Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 160.5nC On-state resistance: 1.6mΩ Power dissipation: 2.6W Drain current: 100A Drain-source voltage: 30V Pulsed drain current: 400A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |