DMT34M8LFDE-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN2020-6 (Type E), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).