| Кількість | Ціна |
|---|---|
| 3+ | 113.07 грн |
| 10+ | 101.90 грн |
| 100+ | 77.53 грн |
| 500+ | 71.30 грн |
| 1000+ | 59.95 грн |
| 2500+ | 55.80 грн |
| 5000+ | 53.79 грн |
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Технічний опис DMT4005SCT Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V, Power Dissipation (Max): 2.3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V.
Інші пропозиції DMT4005SCT за ціною від 115.94 грн до 133.95 грн
| Фото | Назва | Виробник | Інформація |
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DMT4005SCT | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 40V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V |
на замовлення 3950 шт: термін постачання 21-31 дні (днів) |
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DMT4005SCT | Виробник : DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB Case: TO220AB Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 85A Gate charge: 49.1nC On-state resistance: 3.8mΩ Power dissipation: 104W Gate-source voltage: ±20V Pulsed drain current: 160A Kind of package: tube |
товару немає в наявності |