DMT4011LFG-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 40V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.1 грн |
| 6000+ | 11.06 грн |
| 9000+ | 10.27 грн |
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Технічний опис DMT4011LFG-13 Diodes Incorporated
Description: MOSFET N-CH 40V 30A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 15.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції DMT4011LFG-13 за ціною від 10.69 грн до 39.68 грн
| Фото | Назва | Виробник | Інформація |
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DMT4011LFG-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 40V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 15.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 11970 шт: термін постачання 21-31 дні (днів) |
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DMT4011LFG-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
на замовлення 2539 шт: термін постачання 21-30 дні (днів) |
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| DMT4011LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 3000 шт |
товар відсутній |
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| DMT4011LFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.6A; Idm: 65A; 2W Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.6A On-state resistance: 17.8mΩ Type of transistor: N-MOSFET Power dissipation: 2W Kind of package: reel; tape Gate charge: 15.1nC Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 65A Mounting: SMD Case: PowerDI3333-8 |
товар відсутній |