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DMT4015LDV-13

DMT4015LDV-13 Diodes Incorporated

DMT4015LDV.pdf Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 7.8A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 21.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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Технічний опис DMT4015LDV-13 Diodes Incorporated

Description: MOSFET 2N-CH 40V 7.8A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 21.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).