DMT47M2LDV-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.34W (Ta), 14.8W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 24.94 грн |
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Технічний опис DMT47M2LDV-7 Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.34W (Ta), 14.8W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30.2A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 20V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXC).
Інші пропозиції DMT47M2LDV-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT47M2LDV-7 | Виробник : Diodes Inc |
DUAL 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 |
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| DMT47M2LDV-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 14.8W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 On-state resistance: 15mΩ Gate-source voltage: ±20V кількість в упаковці: 2000 шт |
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DMT47M2LDV-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8 T&R 2K |
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| DMT47M2LDV-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 9.5A; Idm: 120A; 14.8W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 120A Power dissipation: 14.8W Gate charge: 14nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 On-state resistance: 15mΩ Gate-source voltage: ±20V |
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