DMT6002LPS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 2.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 53.87 грн |
5000+ | 49.93 грн |
12500+ | 48.27 грн |
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Технічний опис DMT6002LPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 2.3W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT6002LPS-13 за ціною від 49.43 грн до 128.32 грн
Фото | Назва | Виробник | Інформація |
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DMT6002LPS-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMT6002LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm |
на замовлення 1322 шт: термін постачання 21-31 дні (днів) |
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DMT6002LPS-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMT6002LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0015 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0015ohm |
на замовлення 1322 шт: термін постачання 21-31 дні (днів) |
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DMT6002LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 64160 шт: термін постачання 21-31 дні (днів) |
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DMT6002LPS-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS 41V-60V |
на замовлення 2269 шт: термін постачання 21-30 дні (днів) |
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DMT6002LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.3W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 100A Drain-source voltage: 60V Gate charge: 130.8nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 400A кількість в упаковці: 2500 шт |
товар відсутній |
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DMT6002LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Power dissipation: 2.3W On-state resistance: 3mΩ Polarisation: unipolar Drain current: 100A Drain-source voltage: 60V Gate charge: 130.8nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 400A |
товар відсутній |