| Кількість | Ціна |
|---|---|
| 2+ | 164.32 грн |
| 10+ | 104.24 грн |
| 100+ | 61.78 грн |
| 500+ | 49.36 грн |
| 1000+ | 45.74 грн |
| 2500+ | 41.00 грн |
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Технічний опис DMT6004SPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 23A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DMT6004SPS-13 за ціною від 49.42 грн до 170.21 грн
| Фото | Назва | Виробник | Інформація |
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DMT6004SPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 23A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 1636 шт: термін постачання 21-31 дні (днів) |
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DMT6004SPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 23A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
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| DMT6004SPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 2.6W Drain current: 18A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |

