DMT6005LFG-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 60V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.98W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 29.88 грн |
| 4000+ | 26.60 грн |
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Технічний опис DMT6005LFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 1.98W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V.
Інші пропозиції DMT6005LFG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMT6005LFG-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
товару немає в наявності |
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| DMT6005LFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 48.7nC On-state resistance: 7mΩ Power dissipation: 1.98W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |