DMT6005LPS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.34 грн |
| 5000+ | 27.83 грн |
| 12500+ | 26.54 грн |
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Технічний опис DMT6005LPS-13 Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.6W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT6005LPS-13 за ціною від 28.84 грн до 77.5 грн
| Фото | Назва | Виробник | Інформація |
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DMT6005LPS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 60V 17.9A 8-Pin PowerDI 5060 T/R |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMT6005LPS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CHA 60V 17.9A POWERDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 211226 шт: термін постачання 21-31 дні (днів) |
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DMT6005LPS-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
на замовлення 19391 шт: термін постачання 21-30 дні (днів) |
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| DMT6005LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Pulsed drain current: 500A Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Gate charge: 47.1nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
товар відсутній |
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| DMT6005LPS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Pulsed drain current: 500A Drain-source voltage: 60V Drain current: 14.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Gate charge: 47.1nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |