Технічний опис DMT6006LK3-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252, Case: TO252, Kind of package: 13 inch reel; tape, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Gate charge: 34.9nC, On-state resistance: 10mΩ, Power dissipation: 3.1W, Drain current: 71A, Gate-source voltage: ±20V, Pulsed drain current: 350A, Drain-source voltage: 60V, Kind of channel: enhancement.
Інші пропозиції DMT6006LK3-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT6006LK3-13 | Виробник : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K |
товару немає в наявності |
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| DMT6006LK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 3.1W Drain current: 71A Gate-source voltage: ±20V Pulsed drain current: 350A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |