Технічний опис DMT6006LK3-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252, Case: TO252, Kind of package: 13 inch reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 34.9nC, On-state resistance: 10mΩ, Power dissipation: 3.1W, Drain current: 71A, Gate-source voltage: ±20V, Pulsed drain current: 350A, Drain-source voltage: 60V, Kind of channel: enhancement, Type of transistor: N-MOSFET.
Інші пропозиції DMT6006LK3-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT6006LK3-13 | Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMT6006LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 3.1W Drain current: 71A Gate-source voltage: ±20V Pulsed drain current: 350A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT6006LK3-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K
MOSFET MOSFET BVDSS: 41V-60V TO252 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| DMT6006LK3-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.