DMT6008LFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 2000+ | 25.11 грн |
| 4000+ | 22.30 грн |
| 6000+ | 21.34 грн |
| 10000+ | 19.02 грн |
| 14000+ | 18.42 грн |
| 20000+ | 17.84 грн |
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Технічний опис DMT6008LFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V 13A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V.
Інші пропозиції DMT6008LFG-7 за ціною від 19.76 грн до 97.76 грн
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DMT6008LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 13A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V |
на замовлення 157579 шт: термін постачання 21-31 дні (днів) |
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DMT6008LFG-7 | Виробник : Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 12Vgs 13A 2713pF |
на замовлення 3810 шт: термін постачання 21-30 дні (днів) |
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