DMT6011LPDW-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 10.3A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 37.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
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Технічний опис DMT6011LPDW-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 10.3A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), 37.9W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 30V, Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD).
Інші пропозиції DMT6011LPDW-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMT6011LPDW-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K |
товару немає в наявності |