DMT6011LSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2
Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис DMT6011LSS-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SO-8 T&R 2, Input Capacitance (Ciss) (Max) @ Vds: 1072 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції DMT6011LSS-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT6011LSS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
DMT6011LSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Pulsed drain current: 85A Power dissipation: 2.1W Gate charge: 22.2nC Polarisation: unipolar Drain current: 8.5A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| DMT6011LSS-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 41V~60V SO-8 T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.
| DMT6011LSS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Pulsed drain current: 85A
Power dissipation: 2.1W
Gate charge: 22.2nC
Polarisation: unipolar
Drain current: 8.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 85A; 2.1W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Pulsed drain current: 85A
Power dissipation: 2.1W
Gate charge: 22.2nC
Polarisation: unipolar
Drain current: 8.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.