DMT6012LFV-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W
Power dissipation: 1.95W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 22.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 170A
Mounting: SMD
Case: PowerDI3333-8
Drain-source voltage: 60V
Drain current: 34.7A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
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Технічний опис DMT6012LFV-13 DIODES INCORPORATED
Description: MOSFET N-CH 60V 43.3A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 1.95W (Ta), 33.78W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V.
Інші пропозиції DMT6012LFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMT6012LFV-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 43.3A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 1.95W (Ta), 33.78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V |
товару немає в наявності |
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DMT6012LFV-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS 41V-60V |
товару немає в наявності |
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| DMT6012LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.7A; Idm: 170A; 1.95W Power dissipation: 1.95W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 170A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 60V Drain current: 34.7A On-state resistance: 15mΩ Type of transistor: N-MOSFET |
товару немає в наявності |