
DMT6012LPSW-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2500+ | 15.80 грн |
5000+ | 13.97 грн |
7500+ | 13.33 грн |
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Технічний опис DMT6012LPSW-13 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 31.5A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 17.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1522 pF @ 30 V.
Інші пропозиції DMT6012LPSW-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
DMT6012LPSW-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.5A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A кількість в упаковці: 1 шт |
товару немає в наявності |
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DMT6012LPSW-13 | Виробник : Diodes Incorporated |
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товару немає в наявності |
|
DMT6012LPSW-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 10.5A; Idm: 120A; 3.1W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 10.5A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 22.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A |
товару немає в наявності |