
DMT6015LFV-7 Diodes Incorporated

Description: MOSFET N-CH 60V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
на замовлення 1587 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
7+ | 52.62 грн |
10+ | 35.86 грн |
100+ | 24.02 грн |
500+ | 17.69 грн |
1000+ | 15.96 грн |
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Технічний опис DMT6015LFV-7 Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 2.2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V.
Інші пропозиції DMT6015LFV-7 за ціною від 12.92 грн до 56.40 грн
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DMT6015LFV-7 | Виробник : Diodes Incorporated |
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на замовлення 23517 шт: термін постачання 21-30 дні (днів) |
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DMT6015LFV-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 2.2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V |
товару немає в наявності |
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DMT6015LFV-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 18.9nC On-state resistance: 22mΩ Power dissipation: 2.2W Drain current: 7.6A Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |