DMT6015LFVW-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис DMT6015LFVW-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI333, Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMT6015LFVW-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMT6015LFVW-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8/SWP T&R 2K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT6015LFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 15.7nC On-state resistance: 22mΩ Power dissipation: 2.8W Drain current: 8A Gate-source voltage: ±16V Pulsed drain current: 127A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT6015LFVW-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8/SWP T&R 2K
MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8/SWP T&R 2K
товару немає в наявності
В кошику
од. на суму грн.
| DMT6015LFVW-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.7nC
On-state resistance: 22mΩ
Power dissipation: 2.8W
Drain current: 8A
Gate-source voltage: ±16V
Pulsed drain current: 127A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 127A; 2.8W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.7nC
On-state resistance: 22mΩ
Power dissipation: 2.8W
Drain current: 8A
Gate-source voltage: ±16V
Pulsed drain current: 127A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.