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Технічний опис DMT6015LPDW-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 9.4A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 7.9W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V, Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD).
Інші пропозиції DMT6015LPDW-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMT6015LPDW-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 9.4A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 7.9W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMT6015LPDW-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMT6015LPDW-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 7.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 7.9W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT6015LPDW-13 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K
товару немає в наявності
В кошику
од. на суму грн.