DMT6016LFDF-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 60A
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 10000 шт
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Технічний опис DMT6016LFDF-13 DIODES INCORPORATED
Description: MOSFET N-CH 60V 8.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Power Dissipation (Max): 820mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V.
Інші пропозиції DMT6016LFDF-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMT6016LFDF-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 8.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V |
товар відсутній |
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DMT6016LFDF-13 | Виробник : Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A |
товар відсутній |
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| DMT6016LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |