DMT6017LFDF-13 Diodes Incorporated

Description: MOSFET N-CH 65V 8.1A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).