DMT6017LFV-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 65V 36A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
на замовлення 118000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 12.60 грн |
| 4000+ | 11.93 грн |
| 6000+ | 11.73 грн |
| 10000+ | 10.79 грн |
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Технічний опис DMT6017LFV-7 Diodes Incorporated
Description: MOSFET N-CH 65V 36A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V.
Інші пропозиції DMT6017LFV-7 за ціною від 12.34 грн до 66.80 грн
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DMT6017LFV-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 65V 36A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
на замовлення 119818 шт: термін постачання 21-31 дні (днів) |
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DMT6017LFV-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 1995 шт: термін постачання 21-30 дні (днів) |
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| DMT6017LFV-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 140A кількість в упаковці: 1 шт |
товару немає в наявності |
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| DMT6017LFV-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Gate charge: 15.3nC Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 140A |
товару немає в наявності |