| Кількість | Ціна |
|---|---|
| 4+ | 103.38 грн |
| 10+ | 57.83 грн |
| 100+ | 35.66 грн |
| 500+ | 29.82 грн |
| 1000+ | 25.39 грн |
| 2500+ | 25.18 грн |
| 5000+ | 25.04 грн |
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Технічний опис DMT6018LDR-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.8A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V, Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8.
Інші пропозиції DMT6018LDR-13 за ціною від 26.12 грн до 109.18 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DMT6018LDR-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 8.8A 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 |
на замовлення 6137 шт: термін постачання 21-31 дні (днів) |
|
| DMT6018LDR-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
на замовлення 6137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.18 грн |
| 10+ | 66.36 грн |
| 100+ | 44.18 грн |
| 500+ | 32.52 грн |
| 1000+ | 29.64 грн |
| 2000+ | 27.21 грн |
| 5000+ | 26.12 грн |