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Технічний опис DMT6018LDR-7 Diodes Incorporated
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 8.8A, Dauer-Drainstrom Id, p-Kanal: 8.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 8.8A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 1.1W, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: VDFN3030, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.1W, Betriebstemperatur, max.: 150°C.
Інші пропозиції DMT6018LDR-7 за ціною від 45.52 грн до 112.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMT6018LDR-7 | DIODES INC. |
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohmtariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: VDFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
|
DMT6018LDR-7 | DIODES INC. |
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohmtariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.8A Dauer-Drainstrom Id, p-Kanal: 8.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 8.8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: VDFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
| DMT6018LDR-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 8.8A 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 Part Status: Active |
на замовлення 243 шт: термін постачання 21-31 дні (днів) |
|
| DMT6018LDR-7 |
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Виробник: DIODES INC.
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 8.8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VDFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 8.8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VDFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| DMT6018LDR-7 |
![]() |
Виробник: DIODES INC.
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.8A
Dauer-Drainstrom Id, p-Kanal: 8.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 8.8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VDFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMT6018LDR-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 8.8 A, 8.8 A, 0.017 ohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.8A
Dauer-Drainstrom Id, p-Kanal: 8.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 8.8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.1W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: VDFN3030
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.1W
Betriebstemperatur, max.: 150°C
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| DMT6018LDR-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
Description: MOSFET 2N-CH 60V 8.8A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8
Part Status: Active
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 68.28 грн |
| 100+ | 45.52 грн |




